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2SK2569
Silicon N Channel MOS FET
REJ03G1018-0300 Rev.3.00 Dec 27, 2006
Application
High speed power switching
Features
* * * * Low on-resistance. RDS(on) = 2.6 max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
D 3 1 2 G 1. Source 2. Gate 3. Drain
S
Note:
Marking is "ZN-"
Rev.3.00 Dec 27, 2006 page 1 of 6
2SK2569
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10 s, duty cycle 1 % Symbol VDSS VGSS ID ID(pulse)*1 Pch*2 Tch Tstg Ratings 50 20 0.2 0.4 150 150 -55 to +150 Unit V V A A mW
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note: 2. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 |yfs| Ciss Coss Crss td(on) tr td(off) tf Min 50 20 -- -- 0.5 -- -- 0.13 -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.0 3.1 0.23 14.0 17.2 1.73 40 86 1120 430 Max -- -- 1.0 2.0 1.5 2.6 5.0 -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns Test Conditions ID = 100 A, VGS = 0 IG = 100 A, VDS = 0 VDS = 40 V, VGS = 0 VGS = 16 V, VDS = 0 ID = 10 A, VDS = 5 V ID = 100 mA, VGS = 4 V*2 ID = 40 mA, VGS = 2.5 V*2 ID = 100 mA, VDS = 10 V VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 100 mA, RL = 300
Rev.3.00 Dec 27, 2006 page 2 of 6
2SK2569
Main Characteristics
Power vs. Temperature Derating Maximum Safe Operation Area
1 1 ms 0.3 150
Pch (mW)
200
PW
Drain Current ID (A)
= 10
0.1
s m
D C
Channel Dissipation
O pe
100
0.03 0.01 0.003
Operation in this area is limited by RDS(on)
ra tio n
50
0
50
100
150
200
0.001 Ta = 25C 0.1 0.3 1
3
10
30
100
Case Temperature
Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
0.20 10 V 4 V 2.3 V 0.20
Typical Transfer Characteristics
Drain Current ID (A)
Drain Current ID (A)
0.16
2.5 V
0.16 25C Tc = 75C -25C 0.08
0.12 2V
0.12
0.08
0.04 Pulse Test 0 2 4
VGS = 1.5 V
0.04
VDS = 5 V Pulse Test
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
0.5 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
20 Pulse Test 10 5
VGS = 2.5 V
Drain to Source Saturation Voltage VDS (on) (V)
0.4 ID = 0.2 A
0.3
Static Drain to Source on State Resistance RDS (on) ()
2 4V 1 0.5 0.2 0.01 0.02
0.2 0.1 A 0.1 0.05 A
0
2
4
6
8
10
0.05
0.1
0.2
0.5
1
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Dec 27, 2006 page 3 of 6
2SK2569
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
10 Pulse Test 8 ID = 0.2 A
VGS = 2.5 V
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
0.5
0.2 0.1 0.05
Tc = -25C 25C 75C
6
0.1 A 0.05 A 0.2 A 0.05, 0.1 A
4
0.02 0.01 0.005
0.001 0.003 0.01 0.03
2 4V 0 -40 0 40
VDS = 10 V Pulse Test
0.1 0.3 1
80
120
160
Case Temperature TC (C)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
100 30 2 1 Ciss 10 Coss 3 1 0.3 0.1 0 Crss
Switching Characteristics
td(off)
Switching Time t (s)
Capacitance C (pF)
0.5 0.2 0.1
tf
tr td(on)
VGS = 0 f = 1 MHz
10
20
30
40
50
VGS = 10 V 0.05 VDD = 30 V PW = 5 s duty < 1 % 0.02 0.01 0.02 0.05
0.1
0.2
0.5
1
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
0.20
Drain Current
ID (A)
Reverse Drain Current IDR (A)
0.16
0.12
-5 V
VGS = 0
0.08
0.04 Pulse Test 0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage
VSD (V)
Rev.3.00 Dec 27, 2006 page 4 of 6
2SK2569
Switching Test Circuit
Vin Monitor D.U.T. RL VDD = 30 V 90% td(on) tr 90% td(off) tf Vin Vout Vin 10 V 50 10% 10% 10% Vout Monitor
Waveform
90%
Rev.3.00 Dec 27, 2006 page 5 of 6
2SK2569
Package Dimensions
Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) / MPAK(T)V MASS[Typ.] 0.011g
D e
A
Q
c
E
HE
L A A xM S A b
L1 A3 e
LP
Reference Dimension in Millimeters Symbol Min Nom Max
A2
A
A1 S b I1 c b2 A-A Section
e1
Pattern of terminal position areas
A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q
1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25
1.1 0.25 0.4 0.16 1.5 0.95 2.8
1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05
1.95 0.3
Ordering Information
Part Name 2SK2569ZN-TL-E 2SK2569ZN-TR-E Quantity 3000 pcs 3000 pcs Taping Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Dec 27, 2006 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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